Impact of the photoinduced space charge upon semiconductor photoresponse dependence on the concentration of recombination centers under weak optical radiation

Vyacheslav A. Kholodnov; Albina A. Drugova

doi:10.1117/12.407731

28 November 2000 Impact of the photoinduced space charge upon semiconductor photoresponse dependence on the concentration of recombination centers under weak optical radiation

Vyacheslav A. Kholodnov, Albina A. Drugova

Author Affiliations +

Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407731
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation

Abstract

The results of theoretical analysis of influence of the photo-induced space charge upon the photo-carrier initiation, the Dember's effect (photo-EMF) and the photocurrent amplification in the case of inter-band absorption of weak optical radiation and non-equilibrium carrier recombination via deep impurity are presented. The model of a single recombination deep acceptor level and shallow donor impurity is considered. The tasks (including the effect of the gigantic splash of semiconductor photoconductivity upon an increase in the concentration of recombination centers) are solved beyond the commonly used approximation of quasi-neutrality. It is shown that the solutions beyond the approximation of quasi-neutrality may be basically differed from the quasi-neutral solutions.

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Vyacheslav A. Kholodnov and Albina A. Drugova "Impact of the photoinduced space charge upon semiconductor photoresponse dependence on the concentration of recombination centers under weak optical radiation", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407731

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