28 November 2000 MCT heterostructure design and growth by MBE for IR devices
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Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407736
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
The molecular beam epitaxy (MBE) set-up with analytical control equipment of growth process was designed and fabricated for growing A2B6 compounds including the mercury-containing ones. A technology was elaborated for growing mercury-cadmium-telluride (MCT) solid solution heteroepitaxial structures (HS) by molecular beam epitaxy (MBE) method with a given variation of MCT composition throughout the thickness. HS's MCT MBE on CdZnTe/GaAs substrate with different variation composition in layers at MCT film interfaces were designing and growing. These structures were used for manufacture of high quality single, linear and array photoconductors (PC) and photodiodes (PD) operating at 77K and 200-250K temperature wavelength range of 3-5 micrometers and 8-12$ mum, up and over 20micrometers . Widegap layers at MCT film interfaces are used as passivating coating. Narrowgap layer at MCT film/CdZnTe buffer layers interface is used for decrease of PD series resistance. For decrease of dark currents of photodiodes array operating at 200 K HS MCT MBE were used with special composition distribution of composition throughout the thickness.
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Yuri G. Sidorov, Sergey A. Dvoretsky, Nikolay N. Mikhailov, M. V. Yakushev, Vasily S. Varavin, Vladimir V. Vasilyev, A. O. Suslyakov, Victor N. Ovsyuk, "MCT heterostructure design and growth by MBE for IR devices", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407736; https://doi.org/10.1117/12.407736
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