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28 November 2000 Optical properties of Pb1-xSnxSe(In) epitaxial films
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Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407733
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
The optical absorption edge on the indium-doped (NIn less than or equal to 0,8 weight%) Pb1-xSnxSe(X=0.07) epitaxial layers have been investigated. The observed movement of intrinsic absorption edge in the short-wave length region spectrum is interpreted by the presence of indium impurity, which lead to some increasing of the gap width Eg in Pb1-xSnxSe. It has been found, that the inter-zone absorption edge in the weak absorption region Pb1-xSnxSe(In) is conditioned by nondirect optic transitions. The magnitudes of Eg and Eg/dT have been calculated and are described by (square root)K=f(E) curve.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eldar Yu. Salaev, H. R. Nuriyev, Kh. D. Jalilova, and N. V. Faradjev "Optical properties of Pb1-xSnxSe(In) epitaxial films", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407733
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