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The paper is devoted to development and investigation of radiation resistance of photodiodes on the basis of layered compounds GaSe, InSe, GaTe intended for visible and near IR- region of a spectrum. A development of physical bases of a design and technology of manufacturing of photodiodes on the base of gallium selenide, indium selenide and gallium telluride is described in detail. The investigated photodiodes had photosensitivity in the 0.45-1.1 micrometers range of a spectrum with maxima (lambda) GaSe=0,63 micrometers , (lambda) InSe=0,95 micrometers and (lambda) GaTe=0,85 micrometers at room temperature and also had comparatively high photoelectric parameters. Before, after and during an irradiation with low energy electrons with 6 MeV energy (fluence 1012 divided by 1016 cm2) and gamma-quanta (fluence 105 divided by 108 R), high-energy electrons with 25 MeV energy (influence 1012 divided by 1014 cm2), neutrons (1011 divided by 10(superscript 14 cm2) current-voltage and spectral characteristics of photodiodes on the base of gallium selenide, indium selenide and gallium telluride were measured. It is shown that the change of photosensitivity of photodiodes under the influence of ionizing radiation is connected with change in lifetime of major charge carriers. The radiation resistance of the investigated photodiodes is checked and an opportunity of their use under the condition of high radiation level is revealed.
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