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28 November 2000 Photoelectric properties of polycrystal Pb1-x-yGexSnyTe:In thin films grown with modified hot wall method
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Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407730
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
Pb1-x-yGexSnyTe:In thin films were made using hot wall modified method is used for making of. The composition of grown films approximately corresponds to the initial composition of the polycrystalline charge when using this method. Maximum observed concentration deviation (in comparison to charge) of different components in resulting films was: (Delta) nPb less than or equal to 6%, (Delta)nGe less than or equal to 23%, (Delta)nSn less than or equal to 11%. Crystalline perfection of films depends on a substrate type but their composition does not depend on it. Unlike BaF2 substrates, films grown on Si + SiO2 substrates were polycrystalline. Alternating current measurements (responsivity and current dependence on modulation frequency) showed that behavior of polycrytalline films was the same as of monocrystalline films (on BaF2). However direct current measurements (current-voltage and temperature dependence of resistance) showed results, that differ from those for monocrystalline films. The model, based on assumption about existence of traps at the polycrystal grain boundaries was proposed to explain obtained results. Concentration of electrons, captured on these traps was seemingly dependent on the background flux. This model was used to explain difference between monocrystalline and polycrystalline Pb1-x-yGexSbyTe:In thin films.
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Alexander I. Dirochka, Vladimir F. Chishko, Igor L. Kasatkin, Vyacheslav N. Vasil'kov, and Alexandre G. Moisseenko "Photoelectric properties of polycrystal Pb1-x-yGexSnyTe:In thin films grown with modified hot wall method", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407730
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