10 January 2002 Phase-change material for use in rewritable dual-layer optical disk
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Proceedings Volume 4342, Optical Data Storage 2001; (2002) https://doi.org/10.1117/12.453428
Event: Optical Data Storage, 2001, Santa Fe, NM, United States
A thin film of Sn-doped and GeTe-rich GeTe-Sb2Te3 shows characteristics that make it suitable for use in rewritable dual-layer optical disks employing a violet laser. By increasing the GeTe component form Ge2Sb2Te5 to Ge4Sb2Te7, and Ge8Sb2Te11, optical changes were increased. By substituting Sn for a proposition of Ge in these compositions, crystallization rates are greatly increased and even a 5 nm-thick film showed a very short laser-crystallization time of less than 50 ns. The material film was successfully applied to Layer 0 of rewritable dual-layer disk: capacity of 27 GB and a 33 Mbps data transfer rate were confirmed for a disk using a conventional 0.6 mm substrate, and 45 GB capacity and the same data transfer rate were obtained for another disk using thin cover layer 0.1 mm thick.
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Noboru Yamada, Rie Kojima, Mayumi Uno, Tetsuya Akiyama, Hideki Kitaura, Kenji Narumi, Kenichi Nishiuchi, "Phase-change material for use in rewritable dual-layer optical disk", Proc. SPIE 4342, Optical Data Storage 2001, (10 January 2002); doi: 10.1117/12.453428; https://doi.org/10.1117/12.453428


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