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20 August 2001 Characteristics of the Ru buffer layer for EUVL mask patterning
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The characteristics of Ru film were examined to determine its suitability as a buffer layer for EUV mask patterning. When etched in an O2/Cl2 gas mixture with a high Cl2 content at a low total gas flow rate, Ru exhibited a high etching selectivity with respect to a-Si, the otp layer of a Mo/Si multilayer mirror. This could enable use of a simpler mask patterning process without any damage to the multilayer. The patterning of a mask with a TaN absorber layer and a Ru buffer layer was demonstrated. Etching the TaN with an Ar/Cl2 gas mixture yielded a high etching selectivity with respect to Ru of over 30:1. In addition, the use of Ru rather than SiO2 for the buffer layer improved the DUV inspection contrast of TaN mask patterns before and after buffer layer etching. Finally, Ru is etched more slowly than SiO2 by a focused ion beam, which makes it more suitable as a sacrificial layer during repair.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Byoung Taek Lee, Eiichi Hoshino, Masashi Takahashi, Takashi Yoneda, Hiromasa Yamanashi, Hiromasa Hoko, Akira Chiba, Masaaki Ito, Manhyoung Ryoo, Taro Ogawa, and Shinji Okazaki "Characteristics of the Ru buffer layer for EUVL mask patterning", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001);


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