Paper
20 August 2001 Evaluation of Shipley XP2040D positive chemically amplified resist for SCALPEL mask fabrication
Author Affiliations +
Abstract
The Semiconductor Industry Association (SIA) has placed stringent requirements on Next Generation Lithography mask critical dimension (CD) control. A new chemically amplified (CA) positive resist, Shipley XP2040D was evaluated for mask making application. This resist exhibited an extraordinary post exposure bake (PEB) sensitivity, less than 0.6 nm/ degree(s)C, along with a sub-50 nm resolution. The PEB stability in ambient was larger than 4.5 hours and the line-edge-roughness (LER) was less than 2.9 nm.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bing Lu, Zorian S. Masnyj, Pawitter J. S. Mangat, Kevin J. Nordquist, Eric S. Ainley, and Douglas J. Resnick "Evaluation of Shipley XP2040D positive chemically amplified resist for SCALPEL mask fabrication", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436703
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KEYWORDS
Critical dimension metrology

Photomasks

Charged-particle lithography

Mask making

Silicon

Line edge roughness

Photoresist processing

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