20 August 2001 Feasibility study of EUV scanners
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Proceedings Volume 4343, Emerging Lithographic Technologies V; (2001); doi: 10.1117/12.436704
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States
Abstract
EUV lithography is a successor to DUV/VUV lithography, and is the final photon base lithography technology. The concept of EUV scanners for 50nm node and below is considered by clarifying the similarities and differences between EUV scanners and DUV scanners. Illumination optics, projection optics, wafer alignment sensors and wafer focus sensors are examined. And the throughput model, overlay budget and focus budget are introduced. The concrete design of illumination optics and the requirements for sources are described. Numerical aperture, magnification and field size are discussed. EUV scanners for 50nm node and below are realized.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuya Ota, Katsuhiko Murakami, Hiroyuki Kondo, Tetsuya Oshino, Katsumi Sugisaki, Hideki Komatsuda, "Feasibility study of EUV scanners", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436704; https://doi.org/10.1117/12.436704
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KEYWORDS
Semiconducting wafers

Mirrors

Scanners

Reticles

Extreme ultraviolet lithography

Optical alignment

Sensors

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