High-resolution and high-stability electromagnetic-deflection control system for EB lithography system

Koji Nagata; Masahide Okumura; Kenji Maio; Akira Fujii; Hisashi Andoh; Toshiyuki Morimura; Hajime Hayakawa

doi:10.1117/12.436692

20 August 2001 High-resolution and high-stability electromagnetic-deflection control system for EB lithography system

Koji Nagata, Masahide Okumura, Kenji Maio, Akira Fujii, Hisashi Andoh, Toshiyuki Morimura, Hajime Hayakawa

Proceedings Volume 4343, Emerging Lithographic Technologies V; (2001) https://doi.org/10.1117/12.436692
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

A stable high-resolution electromagnetic deflection control circuit for an electron-beam lithography (EBL) system has been developed. This deflection control circuit has enabled an EBL system to deal with a wide deflection area of 2.5-mm square having fine address units for a pattern placement of 1.25 nm. The deflection-control circuit consists of a new digital to analog converter (DAC) circuit, whose resolution is 21 bits, and a low-drift current-amplifier circuit. To achieve such high-stability and high-resolution, we had to develop a low noise-current cell structure for the new DAC circuit, because the output-signal noise of the DAC circuit is a major source of interference at the desired resolution. A local temperature control technique has been incorporated into the circuit to reduce fluctuations of the deflection control signal caused by ambient thermal variations. The low noise-current cell structure, which consists of multiple current buffers and low-pass filters, is placed between a constant current source circuit and a differential-switch circuit for each bit of the DAC circuit. The simulation results of the DAC circuit showed that the output-signal noise of the DAC circuit could be reduced to less than 0.4 nm rms, which is small enough to achieve the desired resolution. As the results of the experimentally evaluation of the deflection control circuit show, the total noise of the deflection-control signal obtained was less than 0.6 nm rms and the signal stability obtained was better than 0.3 nm rms. An evaluation of the performance of the new EBL system to which the new deflection control circuit was applied, showed that the critical-dimension accuracy obtained was better than 5 nm (3sigma) and the positioning accuracy obtained was better than 10 nm (3sigma) for the area controlled by electromagnetic deflector.

Citation Download Citation

Koji Nagata, Masahide Okumura, Kenji Maio, Akira Fujii, Hisashi Andoh, Toshiyuki Morimura, and Hajime Hayakawa "High-resolution and high-stability electromagnetic-deflection control system for EB lithography system", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436692

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