20 August 2001 In-situ stress measurement of molybdenum/silicon multilayers and low-stress multilayers for extreme-ultraviolet lithography
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Proceedings Volume 4343, Emerging Lithographic Technologies V; (2001); doi: 10.1117/12.436713
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States
We developed an in-situ stress monitoring system using variable electrostatic capacitance with a Si wafer cantilever as the moveable electrode of a parallel capacitor. The stress behaviors during the deposition of thick molybdenum (Mo) single layers, conventional molybdenum/silicon (Mo/Si) multilayers and low-stress multilayers (Mo/Si multilayers modified using sub-multilayering and ion beam polishing (IBP)) were observed. In the case of a Mo single layer, at an early stage of deposition to about 40 Angstroms thickness the partial stress was tensile, and after that the partial stress became compressive. In the case of conventional Mo/Si multilayers, a modulation of stress was observed. After Mo-layer deposition the partial stress became tensile, whereas after Si-layer deposition it became compressive, leading to a compressive total stress. In the case of the low-stress multilayers that we developed, we observed the suppression of compressive stress changes of the Si-layer after the IBP of the Mo surface. The control of the partial stress changes of each layer will make it possible to control the total stress of multilayers.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masayuki Shiraishi, Wakana Ishiyama, Noriaki Kandaka, Tetsuya Oshino, Katsuhiko Murakami, "In-situ stress measurement of molybdenum/silicon multilayers and low-stress multilayers for extreme-ultraviolet lithography", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436713; https://doi.org/10.1117/12.436713







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