Ion projection lithography: advances with integrated tool and resist processes

Andreas Wolter; Rainer Kaesmaier; Hans Loeschner

doi:10.1117/12.436672

20 August 2001 Ion projection lithography: advances with integrated tool and resist processes

Andreas Wolter; Rainer Kaesmaier; Hans Loeschner

Author Affiliations +

Proceedings Volume 4343, Emerging Lithographic Technologies V; (2001) https://doi.org/10.1117/12.436672
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Ion Projection Lithography (IPL) uses electrostatic ion- optics for reduction printing of stencil mask patterns to wafer substrates. Key advantages of the technology are the high, non diffraction limited resolution, the great depth of focus associated with the very low numerical aperture, the stabilization of the image with pattern lock techniques and the fine tuning of the ion-optical system with multipole electrodes which allows for comparatively high mechanical tolerances of the tool. O demonstrate, that IPL will be able to met the requirements for industrial production a Process Development Tool has been designed, integrated and put into operation. Currently the adjustable ion optics is being optimized for full resolution and current. A waferstage designed for later integration into the PDT has been successfully tested at ambient air in a separate test bench system. A resist process and the stencil masks necessary for the ion optical experiments are available: Several chemically amplified resists have been tested under ion exposure and showed good sensitivity, contrast and dose latitude. Masks designed for resolution and overlay experiments have been manufactured.

Citation Download Citation

Andreas Wolter, Andreas Wolter, Rainer Kaesmaier, Rainer Kaesmaier, Hans Loeschner, Hans Loeschner, } "Ion projection lithography: advances with integrated tool and resist processes", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436672; https://doi.org/10.1117/12.436672

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