20 August 2001 Mix and match of nanoimprint and UV lithography
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Extensive work has been done in recent years to establish nanoimprint lithography (NIL) as a low-cost technology for nanometer-scaled resist pattern definition. Investigations have revealed that creating of small and periodic nanometer-scaled patterns adjacent to larger patterns is difficult due to the flow behavior of the resist material. In this paper mix and match of NIL and UV lithography is proposed to solve this problem and moreover to attain profiled structures within one coating. A chemically amplified broadband negative tone photoresist based on SU-8 is used to realize this idea.
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Freimut Reuther, Karl Pfeiffer, Marion Fink, Gabi Gruetzner, Hubert Schulz, Hella-Christin Scheer, Freddy Gaboriau, Christophe Cardinaud, "Mix and match of nanoimprint and UV lithography", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436708; https://doi.org/10.1117/12.436708

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