20 August 2001 Mix and match of nanoimprint and UV lithography
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Extensive work has been done in recent years to establish nanoimprint lithography (NIL) as a low-cost technology for nanometer-scaled resist pattern definition. Investigations have revealed that creating of small and periodic nanometer-scaled patterns adjacent to larger patterns is difficult due to the flow behavior of the resist material. In this paper mix and match of NIL and UV lithography is proposed to solve this problem and moreover to attain profiled structures within one coating. A chemically amplified broadband negative tone photoresist based on SU-8 is used to realize this idea.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Freimut Reuther, Freimut Reuther, Karl Pfeiffer, Karl Pfeiffer, Marion Fink, Marion Fink, Gabi Gruetzner, Gabi Gruetzner, Hubert Schulz, Hubert Schulz, Hella-Christin Scheer, Hella-Christin Scheer, Freddy Gaboriau, Freddy Gaboriau, Christophe Cardinaud, Christophe Cardinaud, } "Mix and match of nanoimprint and UV lithography", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436708; https://doi.org/10.1117/12.436708

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