Optical lithography at a 126-nm wavelength

Hoyoung Kang; Anatoly Bourov; Bruce W. Smith

doi:10.1117/12.436707

20 August 2001 Optical lithography at a 126-nm wavelength

Hoyoung Kang, Anatoly Bourov, Bruce W. Smith

Proceedings Volume 4343, Emerging Lithographic Technologies V; (2001) https://doi.org/10.1117/12.436707
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

There is a window of opportunity for optical lithography between wavelengths of 100 nm and 157 nm that warrants exploration as a next generation technology. We will present activities underway to explore the feasibility of VUV optical lithography in this region with respect to source, optical design, materials, processes, masks, resolution enhancement, and compatibility with existing technologies. We have constructed a small field prototype lithography system using the second continuum 126nm emission wavelength of the Argon excimer. This has been accomplished using a small dielectric barrier discharge lamp with output on the order of 10mW/cm² and small field catoptric imaging systems based on a modified Cassegrain system. Capacitance focus gauge and piezo electric stage has been installed for fine focusing. In order to achieve sub-half wavelength resolution that would be required to compete with 157nm lithography and others, we have started exploring the feasibility of using liquefied noble gas immersion fluids to increase effective value of lens numerical aperture by factors approaching 1.4x. Conventional silylation process works well with 126nm with high sensitivity. Chemically amplified DUV negative resist looks very good material for 126 nm. Initial contact printing image shows good selectivity and process control. An effort is also underway to explore the use of inorganic resist materials, as silver halide material for instance, to replace the conventional polymeric imaging systems that are currently employed at longer wavelengths, but may be problematic at these VUV wavelengths. Early accomplishments are encouraging. Prototype optical research tools can be used to reveal issues involved with 126nm lithography and solve initial problems. Though many challenges do exist at this short wavelength, it is quite feasible that lithography at this wavelength could meet the part of the needs of future device generations.

Citation Download Citation

Hoyoung Kang, Anatoly Bourov, and Bruce W. Smith "Optical lithography at a 126-nm wavelength", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436707

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available