Paper
20 August 2001 Performance of the improved JBX-9000MV e-beam lithography system
Tadashi Komagata, Yasutoshi Nakagawa, Nobuo Gotoh, Kazumitsu Tanaka
Author Affiliations +
Abstract
An electron beam mask writing system JBX-9000MV for 150- 190nm technical node masks was improved to cope with the production of masks for 130nm technology node. Some of the new technologies developed for the improvement and their results are reported in this paper.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadashi Komagata, Yasutoshi Nakagawa, Nobuo Gotoh, and Kazumitsu Tanaka "Performance of the improved JBX-9000MV e-beam lithography system", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436697
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Optical testing

Electron beam lithography

Photography

Electron beams

Chromium

Beam shaping

RELATED CONTENT

Performance of improved e-beam lithography system JBX-9000MVII
Proceedings of SPIE (September 05 2001)
Solution for 100 nm: EBM-4000
Proceedings of SPIE (August 01 2002)
Mask CD correction method using dry-etch process
Proceedings of SPIE (October 20 2006)
Multi-shaped beam data preparation
Proceedings of SPIE (May 15 2010)

Back to Top