20 August 2001 Performance of the improved JBX-9000MV e-beam lithography system
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An electron beam mask writing system JBX-9000MV for 150- 190nm technical node masks was improved to cope with the production of masks for 130nm technology node. Some of the new technologies developed for the improvement and their results are reported in this paper.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadashi Komagata, Yasutoshi Nakagawa, Nobuo Gotoh, Kazumitsu Tanaka, "Performance of the improved JBX-9000MV e-beam lithography system", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436697; https://doi.org/10.1117/12.436697

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