20 August 2001 Performance of the improved JBX-9000MV e-beam lithography system
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Abstract
An electron beam mask writing system JBX-9000MV for 150- 190nm technical node masks was improved to cope with the production of masks for 130nm technology node. Some of the new technologies developed for the improvement and their results are reported in this paper.
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Tadashi Komagata, Tadashi Komagata, Yasutoshi Nakagawa, Yasutoshi Nakagawa, Nobuo Gotoh, Nobuo Gotoh, Kazumitsu Tanaka, Kazumitsu Tanaka, } "Performance of the improved JBX-9000MV e-beam lithography system", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436697; https://doi.org/10.1117/12.436697
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