20 August 2001 Tantalum nitride films for the absorber material of refractive-type EUVL mask
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Abstract
Tantalum nitride (TaxN) films were evaluated for use as the absorber material of masks for extreme ultraviolet lithography (EUVL). TaxN films deposited by DC sputtering using an Ar+N2 gas mixture had a low stress of less than 300 MPa, an amorphous-like structure, and a low deep ultraviolet (DUV) reflectivity. This film provides a DUV contrast of 30% with respect to the Mo/Si multilayer whose top is on Si layer. A TaxN film deposited using a Xe+N2 gas mixture was found to be better in the following ways: the stress was below 100 MPa, the change in stress was below 30 MPa, and the density was more than 1 g/cm3 higher. Furthermore, treating the surface of TaxN film with O2 plasma or sputtering a TaxO film on it using an Ar+O2 gas mixture improved the DUV contrast because the resulting surface has a lower DUV reflectivity than TaxN film. These results indicate that TaxN film is one of the most suitable materials for the absorber of EUVL masks.
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Masashi Takahashi, Taro Ogawa, Eiichi Hoshino, Hiromasa Hoko, Byoung Taek Lee, Akira Chiba, Hiromasa Yamanashi, Shinji Okazaki, "Tantalum nitride films for the absorber material of refractive-type EUVL mask", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436702; https://doi.org/10.1117/12.436702
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