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20 August 2001 Tantalum nitride films for the absorber material of refractive-type EUVL mask
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Tantalum nitride (TaxN) films were evaluated for use as the absorber material of masks for extreme ultraviolet lithography (EUVL). TaxN films deposited by DC sputtering using an Ar+N2 gas mixture had a low stress of less than 300 MPa, an amorphous-like structure, and a low deep ultraviolet (DUV) reflectivity. This film provides a DUV contrast of 30% with respect to the Mo/Si multilayer whose top is on Si layer. A TaxN film deposited using a Xe+N2 gas mixture was found to be better in the following ways: the stress was below 100 MPa, the change in stress was below 30 MPa, and the density was more than 1 g/cm3 higher. Furthermore, treating the surface of TaxN film with O2 plasma or sputtering a TaxO film on it using an Ar+O2 gas mixture improved the DUV contrast because the resulting surface has a lower DUV reflectivity than TaxN film. These results indicate that TaxN film is one of the most suitable materials for the absorber of EUVL masks.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masashi Takahashi, Taro Ogawa, Eiichi Hoshino, Hiromasa Hoko, Byoung Taek Lee, Akira Chiba, Hiromasa Yamanashi, and Shinji Okazaki "Tantalum nitride films for the absorber material of refractive-type EUVL mask", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001);

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