Thick silicon membranes as mask blank for SU-8 x-ray deep lithography

Izaque Alves Maia; Luis Otavio S. Ferreira; Maria Helena O. Piazzetta; Graziele C. Natal

doi:10.1117/12.436681

20 August 2001 Thick silicon membranes as mask blank for SU-8 x-ray deep lithography

Izaque Alves Maia, Luis Otavio S. Ferreira, Maria Helena O. Piazzetta, Graziele C. Natal

Proceedings Volume 4343, Emerging Lithographic Technologies V; (2001) https://doi.org/10.1117/12.436681
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Home made masks having thick (35-50 micrometers ) silicon membranes as blanks were used in deep X-ray lithography of SU8 - a negative tone photoresist. X-ray masks were fabricated by the following sequence of steps: (a) vacuum deposition of Ti and Au thin layers on a 220 micrometers thick (100) silicon wafer, (b) optical lithography of two different patterns in both negative (SU-8) or positive (AZ4620) photoresist (c) gold electroforming and (d) silicon substrate thinning with KOH etch to form the membrane. X-ray exposures was performed in the X-ray beam line of the LNLS synchrotron light source. The samples consisted of 125 micrometers thick layers of SU-8 supported on silicon and assorted substrates. The optimum dose for silicon substrates have been used in the remaining substrates, namely, metallic thin films (Cr, Cu, Au, Pt), printed circuit board (PCB), quartz, alumina ceramic and glass. The influence of mask defects, substrate type and X-ray dose values on the lithography of SU-8 is discussed. Criteria for defining upper and lower dose values for SU-8 X-ray deep lithography was proposed on the basis of characteristic defects. Advantages in using SU-8 rather than PMMA in the LIGA technology are commented.

Citation Download Citation

Izaque Alves Maia, Luis Otavio S. Ferreira, Maria Helena O. Piazzetta, and Graziele C. Natal "Thick silicon membranes as mask blank for SU-8 x-ray deep lithography", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436681

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