22 August 2001 Chemical mechanical planarization process induced within lot overlay variation in 0.20-μm DRAM: solution and simulation model
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Abstract
This study assesses the effectiveness of applying zero and non-zero alignment strategies to backend layers of a 0.20 micrometers DRAM process using two alignment methodology (TTL, Through the Lens Alignment, and Athena, Advanced Technology using High-Order Enhancement of Alignment) to investigate alignment mark deformation resulting from a chemical- mechanical planarization (CMP) process and thus compensate the deformation-induced overlay errors. Additionally, a mathematical model is proposed to verify that the intra and inter registration errors in TTL alignment originates from non-zero mark deformation. Several parameters in the CMP process, including pad rotation direction and pad life time are also examined to reduce the deformation-induced overlay errors. Results in this study demonstrate the effectiveness of this approach for tight and correctable compensation within whole lots, thereby demonstrating the optimal combinations of the CMP process parameters, types of alignment marks, and corresponding alignment positions.
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Chih-Ping Chen, Chih-Ping Chen, Brian Huang, Brian Huang, Wilson Lee, Wilson Lee, Wen-Jye Chung, Wen-Jye Chung, Holden T.K. Hou, Holden T.K. Hou, } "Chemical mechanical planarization process induced within lot overlay variation in 0.20-μm DRAM: solution and simulation model", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436731; https://doi.org/10.1117/12.436731
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