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22 August 2001 Electrical characterization of an ion-beam-mixed metal/polymer system
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A new semiconductor material formed by ion beam mixed and implanted metal films on polymer thick films on polymer thick films has been studied. The potential advantage of these materials over commonly used electronic materials is that a wide range of electrical properties can be controlled using processing conditions. The thin metal mixing layer on the surface of the polymer thick film is formed using evaporation and microlithography. The materials can be synthesized monolithically on Si, making them good candidates for use in microelectronics. Ion beam mixing of the polymer with metal film is done by ion implantation through the metal film. The resistivity is reduced compared to the resistivity of ion implanted polymers without the metal layer on the surface. The electrical conductivity demonstrates semiconductive behavior by decreasing with increasing temperature. The resistance and temperature coefficient of resistance increase with increasing thickness of the metal mixing layer. Coulumb Gap (CG) and variable range thermal hopping (VRH) theories are used to fit the temperature dependant experimental data. Results indicate that the thin Cr layer samples are better described by the CG model; while the thick Cr layer materials demonstrate VRH conduction. A model, dependent on the pre-implant metal layer thickness, for the electronic conduction in these unique non-implanted metal-mixed polymer systems is presented.
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Runhui Huang and Ryan E. Giedd "Electrical characterization of an ion-beam-mixed metal/polymer system", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001);

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