Gauge control for sub-170-nm DRAM product features

Neal Lafferty; Christopher J. Gould; Michael E. Littau; Christopher J. Raymond

doi:10.1117/12.436754

22 August 2001 Gauge control for sub-170-nm DRAM product features

Neal Lafferty, Christopher J. Gould, Michael E. Littau, Christopher J. Raymond

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436754
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

As modern circuit architecture features steadily decrease in size, more accurate tools are needed to meaningfully measure critical dimensions (CD). As a general rule, a metrology tool should be able to measure 1/10 of the product tolerance. As CD's continue to shrink, gauge control becomes more relevant. The trend is illustrated in Table 1. The standard in-line critical dimension measurement tool is the top-down scanning electron microscope (SEM). An emergine technology for high speed, high accuracy CD measurement is scatterometry. This paper will compare the two technologies for in-line CD measurement for three applications: A product etch step (assessing gauge capability as well as trending), a product resist step (trending), and lithographic cell monitors (trending).

Citation Download Citation

Neal Lafferty, Christopher J. Gould, Michael E. Littau, and Christopher J. Raymond "Gauge control for sub-170-nm DRAM product features", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436754

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