22 August 2001 Gauge control for sub-170-nm DRAM product features
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As modern circuit architecture features steadily decrease in size, more accurate tools are needed to meaningfully measure critical dimensions (CD). As a general rule, a metrology tool should be able to measure 1/10 of the product tolerance. As CD's continue to shrink, gauge control becomes more relevant. The trend is illustrated in Table 1. The standard in-line critical dimension measurement tool is the top-down scanning electron microscope (SEM). An emergine technology for high speed, high accuracy CD measurement is scatterometry. This paper will compare the two technologies for in-line CD measurement for three applications: A product etch step (assessing gauge capability as well as trending), a product resist step (trending), and lithographic cell monitors (trending).
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Neal Lafferty, Christopher J. Gould, Michael E. Littau, Christopher J. Raymond, "Gauge control for sub-170-nm DRAM product features", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436754; https://doi.org/10.1117/12.436754

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