22 August 2001 High-accuracy EUV metrology of PTB using synchrotron radiation
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Abstract
The development of EUV lithography, has made high-accuracy at-wavelength metrology necessary. Radiometry using synchrotron radiation has been performed by the German national metrology institute, the Physikalisch-Technische Bundesanstalt (PTB), for almost 20 years. Recently, PTB has set up four new beamlines for EUV metrology at the electron storage ring BESSY II. At a bending magnet, a monochromator for soft X-ray radiometry is routinely used for reflectometry and detector characterisation. A reflectometer designed for mirrors up to 550 mm in diameter and 50 kg in mass will be operational in January 2002. Detector characterisation is based on a primary detector standard, a cryogenic electrical substitution radiometer. Measuring tools for EUV source characterisation are calibrated on this basis. Detector testing at irradiation levels comparable to the anticipated conditions in EUV tools is feasible at a plane grating monochromator, installed at an undulator optimised for EUV radiation. A test beamline for EUV optics alignment and system metrology has been installed, using undispersed undulator radiation. Bending magnet radiation is available at a station for irradiation testing. A focusing mirror collects a radiant power of about 10 mW within the multilayer bandwidth and a 1 mm² focal spot.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank Scholze, Frank Scholze, Burkhard Beckhoff, Burkhard Beckhoff, G. Brandt, G. Brandt, R. Fliegauf, R. Fliegauf, Alexander Gottwald, Alexander Gottwald, Roman Klein, Roman Klein, Bernd Meyer, Bernd Meyer, U. D. Schwarz, U. D. Schwarz, R. Thornagel, R. Thornagel, Johannes Tuemmler, Johannes Tuemmler, Klaus Vogel, Klaus Vogel, J. Weser, J. Weser, Gerhard Ulm, Gerhard Ulm, } "High-accuracy EUV metrology of PTB using synchrotron radiation", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436766; https://doi.org/10.1117/12.436766
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