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22 August 2001 Lithography process optimization for 130-nm polygate mask and the impact of mask error factor
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Abstract
This paper describes the design and implementation of a system for monitoring the performance of several major subsystems of a critical dimension measurement scanning electron microscope (CD-SEM). Experiments were performed for tests involving diagnosis of the vacuum system and column stability by monitoring of the following subsystems and associated functional parameters. These include: 1) Vacuum system with pressure as a function of time being recorded for the electron-optical column (gun chamber), the specimen chamber, and the sample-loading unit. 2) The action of several components of the wafer handling system can be timed. 3) The electron gun emission currents and other signals to monitor the characteristics of the condenser and objective lenses may be used to correlate with image quality. 4) Image sharpness, electron beam current, signal-to-noise ratio, etc. can be evaluated.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen Hsu, Xuelong Shi, Robert John Socha, J. Fung Chen, Jason C. Yee, Mohan Anath, Sunil Desai, Philip H. Imamura, Micheal J. Sherrill, Y. C. Tseng, H. A. Chang, J. F. Kao, Alex Tseng, WeiJyh Liu, Anseime Chen, Arthur Lin, Jan Pieter Kujten, Eric Jacobs, and Arjan Verhappen "Lithography process optimization for 130-nm polygate mask and the impact of mask error factor", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436806
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