22 August 2001 Monte Carlo model of charging in resists in e-beam lithography
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Charging effects on beam deflection of incident electrons in electron beam lithography are investigated. We show first in detail how the non-unity yield of electron generation in insulator resists leads to local charging accumulation and affects the beam deflection of incident electrons as charging develops. Then the amounts of beam deflection are identified for various operating and resist dimension conditions, and then we conclude that the beam deflection should be avoided for more accurate manufacturing semiconductor devices by the control of charging effects.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yeong-Uk Ko, Yeong-Uk Ko, David C. Joy, David C. Joy, } "Monte Carlo model of charging in resists in e-beam lithography", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436751; https://doi.org/10.1117/12.436751


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