Paper
22 August 2001 Optimization of dielectric antireflective coatings on a transparent substrate in sub-half-micron CMOS technology
Graham G. Arthur, Brian Martin, Christine Wallace
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Abstract
The optimization of a dielectric anti-reflective coating (ARC) on a transparent substrate with significant topography is described. Supporting theory is provided and although it is not possible to obtain the ultimate performance of an ARC over planar film stacks and flat substrates, the critical dimension (CD) swing ratio is greatly reduced and a manufactureable solution achieved using response surface modeling (RSM) in combination with data generated form the lithography simulation tool, PROLITH/2.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Graham G. Arthur, Brian Martin, and Christine Wallace "Optimization of dielectric antireflective coatings on a transparent substrate in sub-half-micron CMOS technology", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436790
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Reflectivity

Dielectrics

Oxides

Critical dimension metrology

Antireflective coatings

Lithography

CMOS technology

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