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22 August 2001 Postdevelopment defect evaluation
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Abstract
Reduction of defects after development is a critical issue in photolithography. A special category of post development defects is the satellite defect which is located in large exposed areas generally in proximity to large unexposed regions of photoresist. We have investigated the formation of this defect type on ESCAP and ACETAL DUV resists with and without underlying organic BARCs, In this paper, we will present AFM and elemental analysis data to determine the origin of the satellite defect. Imaging was done on a full-field Nikon 248nm stepper and resist processing was completed on a TEL CLEAN TRACK ACT 8 track. Defect inspection and review were performed on a KLA-Tencor and Hitachi SEM respectively. Results indicate that the satellite defect is generated on both BARC and resist films and defect counts are dependent on the dark erosion. Elemental analysis indicates that the defects are composed of sulfur and nitrogen compounds. We suspect that the defect is formed as a result of a reaction between PAG, quencher and TMAH. This defect type is removed after a DIW re-rinse.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Osamu Miyahara, Yukio Kiba, and Yuko Ono "Postdevelopment defect evaluation", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436783
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