Secondary-electron image profiles using bias voltage technique in deep contact hole

Yeong-Uk Ko; David C. Joy; Neal T. Sullivan; Martin E. Mastovich

doi:10.1117/12.436786

22 August 2001 Secondary-electron image profiles using bias voltage technique in deep contact hole

Yeong-Uk Ko, David C. Joy, Neal T. Sullivan, Martin E. Mastovich

Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436786
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Charging effects on secondary electron (SE) profiles with bias voltage in deep contact holes are investigated. We show first in detail the SE beam profiles for operating conditions such as scanning time, current and landing energy, the brightness of the bottom of the contact hole depends on the charge of SE yield with incident energy. We conclude that we can enhance the contrast of the beam profile by optimizing the applied bias voltage.

Citation Download Citation

Yeong-Uk Ko, David C. Joy, Neal T. Sullivan, and Martin E. Mastovich "Secondary-electron image profiles using bias voltage technique in deep contact hole", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436786

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