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22 August 2001 Wafer scale error induced by bottom antireflective coating
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Abstract
Wafer-induced-shift caused by bottom anti-reflective coating (BARC) was observed during the misalignment compensation of stepper. This was represented as wafer scale component, that is, shot position dependence across the diameter of the wafer. Measurement error was quantified by comparison between pre- and post-etch pattern alignment data. Typical wafer scale value difference of 0.2ppm in 200mm diameter wafer was observed corresponding to maximum 20nm misalignment in the wafer edge. This is a detrimental value in critical mask step of current device manufacturing, and can be even more serious in next generation design rule adopting 300mm wafer, meaning maximum 30nm false measurement in the wafer edge. To reveal the cause of this phenomenon, the same sequential evaluation was performed without BARC application. No corresponding effect was detected supporting that BARC really caused such wafer-induced-shift. It was found that the wafer-induced-shift amount could be correlated with the size and shape of the alignment monitor pattern. We concluded that the wafer-induced-shift could be minimized by careful adoption of the alignment mark.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong-Seok Kim, JongHo Jeong, Byung-Ho Nam, Young Ju Hwang, and Young Jin Song "Wafer scale error induced by bottom antireflective coating", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436784
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