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24 August 2001 157-nm imaging using thick single-layer resists
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Abstract
During the past year the probability that 157 nm lithography will precede next generation lithographies such as EUV or EPL has increased, partly due to encouraging advances in the design of polymeric materials, which have sufficient transparency at 157 nm to serve as platforms for single layer photoresists. We have identified several fluorinated resins which can be developed in aqueous 0.26 N TMAH, have reasonable etch resistances (comparable to poly-parahydroxystyrene), and can be formulated to yield photoresists with optical absorbancies at 157 nm which are low enough to be used at thicknesses of 150-200 nm. We have imaged a number of these formulated resists at 157 nm with the Exitech microstepper at International Sematech, and the results for formulated resists with optical absorption coefficients (base 10) as low as 2.1 per micron are described.
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Michael K. Crawford, Andrew E. Feiring, Jerald Feldman, Roger H. French, Viacheslav A. Petrov, Frank L. Schadt III, Robert J. Smalley, and Fredrick C. Zumsteg Jr. "157-nm imaging using thick single-layer resists", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436874
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