193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries

Toru Kajita; Yukio Nishimura; Masafumi Yamamoto; Hiroyuki Ishii; A. Soyano; A. Kataoka; Mark Slezak; Makoto Shimizu; Pushkara Rao Varanasi; G. Jordahamo; Margaret C. Lawson; R. Chen; William R. Brunsvold; Wenjie Li; Robert D. Allen; Hiroshi Ito; Hoa D. Truong; Thomas I. Wallow

doi:10.1117/12.436833

24 August 2001 193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries

Toru Kajita, Yukio Nishimura, Masafumi Yamamoto, Hiroyuki Ishii, A. Soyano, A. Kataoka, Mark Slezak, Makoto Shimizu, Pushkara Rao Varanasi, G. Jordahamo, Margaret C. Lawson, R. Chen, William R. Brunsvold, Wenjie Li, Robert D. Allen, Hiroshi Ito, Hoa D. Truong, Thomas I. Wallow

Author Affiliations +

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436833
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

The objective of this report will be to clarify the maturity of the current 193 SLR materials. We are going to report on all major platform chemistries, i.e.,(meth) acrylate system, ROMP system, cyclic olefin addition system, cyclic olefin/maleic anhydride system, vinyl ether/maleic anhydride system, and cyclyzed system at the same time. We are going to discuss maturity of each platform from several viewpoints such as polymerization process, physical properties of the resins, lithographic performances of the resists, and process latitude of the resists including etch performances. We are also referring to several critical issues such as etch resistance, surface roughness after etch, line slimming, etc. Three major platform chemistries, (meth)acrylate, COMA, and addition, are selected in order to cover the whole spectra of layer requirements. Those three systems respectively show characteristics lithographic performances.

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Toru Kajita, Yukio Nishimura, Masafumi Yamamoto, Hiroyuki Ishii, A. Soyano, A. Kataoka, Mark Slezak, Makoto Shimizu, Pushkara Rao Varanasi, G. Jordahamo, Margaret C. Lawson, R. Chen, William R. Brunsvold, Wenjie Li, Robert D. Allen, Hiroshi Ito, Hoa D. Truong, and Thomas I. Wallow "193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436833

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