All Co2-processed 157-nm fluoropolymer-containing photoresist systems

Christopher L. McAdams; Devin Flowers; Erik N. Hoggan; Ruben G. Carbonell; Joseph M. DeSimone

doi:10.1117/12.436835

24 August 2001 All Co₂-processed 157-nm fluoropolymer-containing photoresist systems

Christopher L. McAdams, Devin Flowers, Erik N. Hoggan, Ruben G. Carbonell, Joseph M. DeSimone

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436835
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

We present our progress on implementing a completely carbon dioxide-processed 157nm photoresist system. While current processes rely on the use of large amounts or organic and aqueous solvents, our chemistry and equipment will allow both negative and positive-tone imaging using CO₂ as a casting solvent, developer, and stripping solvent. The unique solubility characteristics of fluoropolymers in CO₂ make it possible to use this cleaner and simpler approach with improved optical transparency at 157nm and excellent etch resistance. Also, the inherently low surface tension and viscosity and excellent wetting properties of liquid CO₂ will allow us to generate defect-free thin films on large area wafers (300mm and larger). In addition, CO₂-based development can virtually eliminate image collapse problems associated with aqueous-base development. Aside form performance issues, our process eliminates several waste streams from the semiconductor manufacturing process and replaces them with the more environmentally benign CO₂-this reduction in complexity could allow the integration of multiple processes and provide an enormous savings to the industry.

Citation Download Citation

Christopher L. McAdams, Devin Flowers, Erik N. Hoggan, Ruben G. Carbonell, and Joseph M. DeSimone "All Co₂-processed 157-nm fluoropolymer-containing photoresist systems", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436835

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