24 August 2001 Design and performance of photoresist materials for ArF lithography
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Abstract
In this paper we review the design and performance of ArF resists developed from various polymer platforms. Inadequate etch performance of early ArF acrylate platforms necessitated the development of new etch resistant platforms, in terms of both etch rate and etch uniformity. Two resist platforms were developed to address etch resistance: 1) alternating copolymers of cyclic olefins and maleic anhydride (COMA); and 2) polycycloolefin polymers (CO). Improvements have been made in the imaging performance of these resists, such that they now approach the lithographic performance of acrylate based resists. Recently, a third platform based on polymerization of vinyl ethers with maleic anhydride (VEMA), which has excellent etch performance, was developed by Samsung. Here we will focus our discussion on acrylate, COMA and VEMA based resists.
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Hyun-Woo Kim, Hyun-Woo Kim, Dong-Won Jung, Dong-Won Jung, Sook Lee, Sook Lee, Sang-Jun Choi, Sang-Jun Choi, Sang-Gyun Woo, Sang-Gyun Woo, Robert J. Kavanagh, Robert J. Kavanagh, George G. Barclay, George G. Barclay, Robert F. Blacksmith, Robert F. Blacksmith, Doris Kang, Doris Kang, Gerd Pohlers, Gerd Pohlers, James F. Cameron, James F. Cameron, Joe Mattia, Joe Mattia, Stefan Caporale, Stefan Caporale, Thomas Penniman, Thomas Penniman, Lori Anne Joesten, Lori Anne Joesten, James W. Thackeray, James W. Thackeray, } "Design and performance of photoresist materials for ArF lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436908; https://doi.org/10.1117/12.436908
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