24 August 2001 Development of 193-nm organic BARC
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Bottom Anti-Reflective Coatings (BARC) for ArF Lithography Technology were developed using a polymeric system, which was thermally stable to sustain high temperatures encountered in bake process. On Lithographic performance, the shape of photoresist pattern on new BARC was controllable by the additives in BARC composition. For example, NCA429 was compatible with PAR710(sumitomo ArF photo resist). New ArF BARC also have better properties suitable for current process than existing ArF BARC.: Firstly, the etch rate was about 1.3-1.5 times higher than that of PAR710. New BARC was able to be etched faster than existing BARC. Secondly, spin bowl crosslinking issue of BARC in spin cup and drain was solved to wash by photoresist solvent, because it was hard to crosslink without baking.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahiro Kishioka, Shinya Arase, Kazuhisa Ishii, Kenichi Mizusawa, Hiroyoshi Fukuro, "Development of 193-nm organic BARC", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436914; https://doi.org/10.1117/12.436914


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