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24 August 2001 Development of DUV resists for zero angle and angled implant applications
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Abstract
As the semiconductor industry continues to follow Moore's Law by continually shrinking linewidths, DUV lithographic capacity is increasing. This greater capacity has increased the use of 248nm DUV lithography for all levels particularly applications such as metal and implant layers. Smaller features have required that more advanced implantation techniques be employed. These include greater control of implant depth, gradient, and lateral ion movement. These tighter requirements on the implant process naturally necessitate advanced requirements on the photoresists used in these processes. This paper will discuss the design criteria necessary to develop an advanced DUV resist for a variety of implant layer sand will show resist performance for these applications.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patricia Fallon, Michael Francis Cronin, Joseph Lachowski, Pasquale R. Valerio, Larry Bachetti, Jacque H. Georger Jr., Mike Mori, David N. Tomes, and Kim Wynja "Development of DUV resists for zero angle and angled implant applications", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436893
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