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24 August 2001 Development of resists for thermal flow process applicable to mass production
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Abstract
There are several methods to form small contact holes which are made by optically optimized conditions including PSM, OAI, high NA system. Those methods were very difficult to print sub-130nm contact holes. To print sub-130nm contact holes, we have developed new photoresists for thermal flow process. They could be classified into crosslinking and non-crosslinking system according to whether it could be crosslinked or not during the baking steps. The crosslinking system was consisted of conventional polyhydroxy styrene-based polymers with an additive for cross-linking reactions and the non-crosslinking system was designed by optimized formulation conditions such as molecular weights (Mw), protecting ratio, the amount of photo acid generators and additives. As a result, we obtained 0.13um resolution with 0.6 um DOF by thermal flow process and effectively controlled the flow rate, 10~15nm/ degree(s)C. Also we achieved vertical 90nm contact holes without any pattern deformation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yool Kang, Sang-Gyun Woo, Sang-Jun Choi, and Joo-Tae Moon "Development of resists for thermal flow process applicable to mass production", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436851
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