Effect of end group structures of methacrylate polymers on ArF photoresist performances

Hikaru Momose; Shigeo Wakabayashi; Tadayuki Fujiwara; Kiyoshi Ichimura; Jun Nakauchi

doi:10.1117/12.436903

24 August 2001 Effect of end group structures of methacrylate polymers on ArF photoresist performances

Hikaru Momose; Shigeo Wakabayashi; Tadayuki Fujiwara; Kiyoshi Ichimura; Jun Nakauchi

Author Affiliations +

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436903
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

The relationship between the sensitivity of ArF photoresist and the end group structures of copolymers consisting of (beta) -hydroxy-(gamma) -butyrolactone methacrylate (HGBMA) and 2-methyl-2-adamantyl methacrylate (MadMA) was investigated. The sensitivity is strongly dependent on the kind and amount of end groups. It has been found that the copolymer with relatively non-polar end group structure has higher sensitivity than that with polar end group structure, and that the sensitivity of copolymer with end groups of methylisobutyrate and 1-octhylthio moieties showed approximately three times higher than that of copolymer with end groups of isobutyronitrile and 2-hydroxyethylthio moieties. The difference of sensitivity among these copolymers has been discussed from the view point of the change of development rate attributed to the amount of carboxylic acid groups formed in the resist film by exposure of 193nm light.

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Hikaru Momose, Hikaru Momose, Shigeo Wakabayashi, Shigeo Wakabayashi, Tadayuki Fujiwara, Tadayuki Fujiwara, Kiyoshi Ichimura, Kiyoshi Ichimura, Jun Nakauchi, Jun Nakauchi, } "Effect of end group structures of methacrylate polymers on ArF photoresist performances", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436903; https://doi.org/10.1117/12.436903

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