24 August 2001 Effect of fluorinated monomer unit introduction to KrF resin system in F2 lithography
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Abstract
We reported the novel copolymer system containing fluorine atom with hydroxystyrene (HST) and 3-(perfluoro-3- methylbutyl)-2-hydroxypropyl methacrylate (MBHPMA). Using the copolymer, melamine crosslinker and PAG, negative resist was formulated. Transmittance of the resist film was 35% at 0.1micrometers thickness. High contrast negative pattern was obtained by F2 excimer laser exposure. Dry-etching resistance of the resist was comparative to novolak type i- line resist.
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Yasunori Uetani, Kazuhiko Hashimoto, Yoshiko Miya, Isao Yoshida, Mikio Takigawa, Ryotaro Hanawa, "Effect of fluorinated monomer unit introduction to KrF resin system in F2 lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436869; https://doi.org/10.1117/12.436869
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