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24 August 2001 Encapsulated inorganic resist technology applied to 157-nm lithography
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Abstract
In order to increase plasma etch selectivity in traditional single layer organic resists SiO2 nanoparticles have been added to typical 248nm resist formulations. Formulation modifications are necessary due to the dissolution acceleration effect of the particles. Surface functionalization of the nanoparticle surfaces with organic groups lessens this effect and allows the inclusion of acid labile groups. This allows for a wider formulation window and limits unexposed film thickness losses (UFTL). Both t- butyl ester groups and poly(t-butyl acrylate) have been used to achieve this effect. Encapsulated inorganic resist technology (EIRT) can be used as a single layer hard mask compatible with existing resist processing steps and replace complex and costly multilevel resist approaches. Lithogrpahic evaluations have been performed with electron beam, and with 248nm and 157nm projection systems. Greater transparency at 157nm is achieved by the addition of these materials, thus enabling the use of thicker films. High resolution imaging is demonstrated at these wavelengths.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Theodore H. Fedynyshyn, Roger F. Sinta, Michael Sworin, Russell B. Goodman, Scott P. Doran, I. Sondi, and Egon Matijevic "Encapsulated inorganic resist technology applied to 157-nm lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436860
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