High-etch-rate type 248-nm bottom antireflective coatings

Tomoyuki Enomoto; Shinya Arase; Kenichi Mizusawa; Hiroyoshi Fukuro

doi:10.1117/12.436915

24 August 2001 High-etch-rate type 248-nm bottom antireflective coatings

Tomoyuki Enomoto, Shinya Arase, Kenichi Mizusawa, Hiroyoshi Fukuro

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436915
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

A frequent problem encountered by photoresists during the manufacturing of semiconductor device is that activating radiation is reflected back into the photoresist by the substrate. So, it is necessary that the light reflection is reduced from the substrate. One approach to reduce the light reflection is the use of bottom anti-reflective coating (BARC) applied to the substrate beneath the photoresist layer. The BARC technology has been utilized for a few years to minimize the reflectivity. Recently, reduction of chip size is speeded up and device feature sizes shift to sub 0.15 micron meter with KrF lithography techniques. The thickness of photoresist is decreasing with reduction of device feature sizes. So, requirements of new 248nm BARC are higher etch rate than the existing 248nm BARC. High etch rate type 248nm BARC developed with the objective being a commercial product. The suitable high performance 248nm BARCs, NCA300 series, were made. Using CF4 gas as etchant, the plasma etch rate of NCA300 series were about 1.6 tiems higher than that of 248nm photoresist and about 1.2 times higher than that of our existing BARCs, DUV42 or DUV44. Using CF₄/O₂ mixture gas as etchant, the plasma rate of NCA300 series were about 1.5 times higher than that of 248nm photoresist and about 1.1 times higher than that of DUV42 or DUV44.

Citation Download Citation

Tomoyuki Enomoto, Shinya Arase, Kenichi Mizusawa, and Hiroyoshi Fukuro "High-etch-rate type 248-nm bottom antireflective coatings", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436915

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