High resolution patterning in chemically amplified resists: the effect of film thickness

David R. Medeiros; Wayne M. Moreau; Karen E. Petrillo; Maharshi Chauhan; Wu-Song Huang; Christopher Magg; Dario L. Goldfarb; Marie Angelopoulos; Paul F. Nealey

doi:10.1117/12.436853

24 August 2001 High resolution patterning in chemically amplified resists: the effect of film thickness

David R. Medeiros, Wayne M. Moreau, Karen E. Petrillo, Maharshi Chauhan, Wu-Song Huang, Christopher Magg, Dario L. Goldfarb, Marie Angelopoulos, Paul F. Nealey

Author Affiliations +

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436853
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

As thin film imaging becomes an accepted means of producing high-resolution microelectronics features, a host of new challenges has emerged. A dose dependence on resist thickness has been observed and systematically measured for chemically amplified resists exposed with 75 keV electron beam radiation. The required dose to print 100nm images increased as the thickness of the film decreased. A physiochemical explanation for this dependence was sought which included exploring thickness-induced variations in thermal characteristics of the resist film. Over the range of film thickness examined, 80-360nm, these parameters were deemed unlikely contributors to this phenomenon. Ultimately the data suggests that the dose variation with thickness may correlate to differences in the population of chemically effective electron with energies in the range of 10 to 100 eV that are responsible for the sensitization of electron beam resists.

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David R. Medeiros, Wayne M. Moreau, Karen E. Petrillo, Maharshi Chauhan, Wu-Song Huang, Christopher Magg, Dario L. Goldfarb, Marie Angelopoulos, and Paul F. Nealey "High resolution patterning in chemically amplified resists: the effect of film thickness", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436853

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