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24 August 2001 Optimization of ArF resist for 100-nm node: DOE and fine-tuning of basic platform
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Abstract
ArF lithography is pushing its limit to beyond the 100-nm node due to delay of NGL technologies to meet the aggressive insertion schedules. However, lithography process for 100-nm node with binary mask and ArF resist is still not easy to achieve and will be one of the big challenges for lithography community. Although there have been significant improvements over the past year, ArF resists remain as the most critical aspect in ArF lithography development. Areas of concern for ArF resist include; higher level of environmental instability compared to KrF materials, different response depending on the tone of reticles, and different performance exhibited between microsteppers used for initial development and full field scanners to be used in manufacturing. We expect that these problems will be getting worse in sub 100-nm node. To achieve the most challenging performance goals, the resist to be used in manufacturing will require optimization of the chemical formulation of commercialized resists based on specific design requirements, process and environmental conditions. This paper will describe an extensive DOE (design of experiments) that was performed in order to find better resist formulation from commercialized resists for our specific FAB environment. PAG, resin and amine were main three components for this DOE. After choosing the best resist for 100-nm node, we have will evaluated actual lithographic performance capability such as DOF, exposure latitude, etc.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keeho Kim, Gregory M. Wells, Won D. Kim, Yong-Jun Choi, Se-Jin Choi, Yang-Sook Kim, and Deog-Bae Kim "Optimization of ArF resist for 100-nm node: DOE and fine-tuning of basic platform", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436846
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