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24 August 2001 Resist composition effects on ultimate resolution of negative-tone chemically amplified resists
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Abstract
Chemical Amplification Resists (CAR) are now widely used in optical lithography since the introduction of the deep UV era. One advantage of the CARs is also their full compatibility with electron beam writing. This paper is focused on the development work of a negative tone resist. The influence of resist compounds such as polymer matrix composition and PAG size on diffusion and ultimate resolution is detailed. Finally the pattern transfer capabilities of a 30 nm isolated line into a polysilicon layer is presented.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurent Pain, C. Gourgon, K. Patterson, B. Scarfogliere, Serge V. Tedesco, Gilles L. Fanget, B. Dal'zotto, M. Ribeiro, Tadashi Kusumoto, Masumi Suetsugu, and Ryotaro Hanawa "Resist composition effects on ultimate resolution of negative-tone chemically amplified resists", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436854
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