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24 August 2001 Resist materials for 157-nm lithography
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Fluoropolymers are key materials for single layer resists of 157nm lithography. We have been studying fluoropolymers to identify their potential for base resins of 157nm photoresist. Many fluoropolymers showed high optical transparencies, with absorption coefficients of 0.01micrometers -1 to 2micrometers -1 at 157nm, and dry- etching resistance comparable to an ArF resist, and non- swelling solubility in the standard developer. Positive- tone resists were formulated using fluoropolymers that fulfill practical resist requirements. They showed good sensitivities, from 1 mJ/cm(superscript 2 to 10 mJ/cm2, and contrast in the sensitivity curves. They were able to be patterned using a F2 laser microstepper.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Toriumi, Seiichi Ishikawa, Seiro Miyoshi, Takuya Naito, Tamio Yamazaki, Manabu Watanabe, and Toshiro Itani "Resist materials for 157-nm lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001);

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