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24 August 2001 Silicon-containing resists for 157-nm applications
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Abstract
We have designed and developed an aqueous base soluble polymer system with a silsequioxane (SSQ) backbone for 157nm bilayer resist applications. These base resins have absorbances as low as 0.6micrometers -1 at 157nm. The imagable polymers which contain acid-labile ester functionalities have absorbances between 2.0 and 3.0micrometers -1. The silicon content of these polymers is around 15% by weight. Therefore, our polymers can be utilized in 157nm positive bilayer resist applications with a film thickness of around 150nm. We have evaluated several resist formulations based on these polymers. These resist formulations have shown high contrast and excellent resolution.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ratnam Sooriyakumaran, Debra Fenzel-Alexander, Nicolette Fender, Gregory M. Wallraff, and Robert D. Allen "Silicon-containing resists for 157-nm applications", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436861
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