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24 August 2001 Transparent resins for 157-nm lithography
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The development of sufficiently transparent resin systems is one of the key elements required for a successful and timely introduction for 157 nm lithography. This paper reports on the Simple Transmission Understanding and Prediction by Incremental Dilution (STUPID) model, a quick back-of-the-envelope increment scheme to estimate the absorption of polymers at 157 nm. A number of promising candidate resins based on norbornenes are discussed, and results with a first 157 nm resin system developed at the University of Austin are presented. The new system is based on copolymers of norbornene-5-methylenehexafluoroisopropanol (NMHFA) and t-butyl norbornene carboxylate (BNC), formulated with an acetal additive obtained by copolymerization of t-butyl norbornene-5-trifluoromethyl-5-carboxylate (BNTC) with carbon monoxide. Lithographic performance of this system extends to 110 nm dense features using standard illumination and a binary mask, or 80 nm semi-dense and 60 nm isolated features with a strong phase shift mask. The dry etch resistance of this resist is found to be slightly lower than APEX-E DUV resist for polysilicon but superior to it for oxide etches.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ralph R. Dammel, Raj Sakamuri, Andrew R. Romano, Richard Vicari, Cheryl Hacker, Will Conley, and Daniel A. Miller "Transparent resins for 157-nm lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001);


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