100-nm gate lithography for double-gate transistors

Azalia A. Krasnoperova; Ying Zhang; Inna V. Babich; John Treichler; Jung H. Yoon; Kathryn Guarini; Paul M. Solomon

doi:10.1117/12.435793

14 September 2001 100-nm gate lithography for double-gate transistors

Azalia A. Krasnoperova, Ying Zhang, Inna V. Babich, John Treichler, Jung H. Yoon, Kathryn Guarini, Paul M. Solomon

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435793
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

Citation Download Citation

Azalia A. Krasnoperova, Ying Zhang, Inna V. Babich, John Treichler, Jung H. Yoon, Kathryn Guarini, and Paul M. Solomon "100-nm gate lithography for double-gate transistors", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435793

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